P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC SI4431CDY-T1-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор: P-MOSFET, полевой, -30В, -7,2А, Idm: -30А, 2,7Вт, SO8 Характеристики Категория | Диод |
Тип | защитный |
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current | 7.2 A |
Maximum Drain Source Resistance | 49 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 4.2 W |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOIC |
Pin Count | 8 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 25 nC @ 10 V |
Width | 4mm |
Continuous Drain Current (Id) @ 25В°C | 9A(Tc) |
Power Dissipation-Max (Ta=25В°C) | 4.2W(Tc) |
Rds On - Drain-Source Resistance | 32mО© @ 7A,10V |
Transistor Polarity | P Channel |
Vds - Drain-Source Breakdown Voltage | 30V |
Vgs - Gate-Source Voltage | 2.5V @ 250uA |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 18 S |
Id - Continuous Drain Current: | 9 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOIC-8 |
Part # Aliases: | SI4431CDY-GE3 |
Pd - Power Dissipation: | 4.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 38 nC |
Rds On - Drain-Source Resistance: | 32 mOhms |
Rise Time: | 13 ns |
Series: | SI4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 23 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Вес, г | 7 |