120V 20A, Schottky Diode, 3-Pin TO-220AB V20120S-E3/4W
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1 980 ֏
Кратность заказа 5 шт.
5 шт.
на сумму 9 900 ֏
Описание
Semiconductors\Discrete Semiconductors\Schottky Diodes & Rectifiers
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure.
Технические параметры
Diode Configuration | Single |
Diode Technology | Schottky Barrier |
Diode Type | Schottky |
Maximum Continuous Forward Current | 20A |
Maximum Forward Voltage Drop | 1.12V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220AB |
Peak Non-Repetitive Forward Surge Current | 200A |
Peak Reverse Repetitive Voltage | 120V |
Pin Count | 3 |
Rectifier Type | Schottky Rectifier |
Brand: | Vishay General Semiconductor |
Configuration: | Single Dual Anode |
Factory Pack Quantity: Factory Pack Quantity: | 8000 |
If - Forward Current: | 20 A |
Ifsm - Forward Surge Current: | 200 A |
Ir - Reverse Current: | 300 uA |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -20 C |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Rectifiers |
Subcategory: | Diodes & Rectifiers |
Technology: | Si |
Termination Style: | Through Hole |
Tradename: | TMBS |
Type: | Schottky Diode |
Vf - Forward Voltage: | 1.03 V |
Vrrm - Repetitive Reverse Voltage: | 120 V |
Вес, г | 5 |