FF400R12KE3HOSA1, Биполярный транзистор IGBT, 1200 В, 400 А
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см. техническую документацию
см. техническую документацию
86 400 ֏
от 2 шт. —
82 400 ֏
от 3 шт. —
82 300 ֏
1 шт.
на сумму 86 400 ֏
Описание
Транзисторы / IGBT (БТИЗ) транзисторы / Силовые модули IGBT
Биполярный транзистор IGBT, 1200 В, 400 А
Технические параметры
| Корпус | 62 mm | |
| Base Product Number | FF400R12 -> | |
| Configuration | Half Bridge | |
| Current - Collector (Ic) (Max) | 580A | |
| Current - Collector Cutoff (Max) | 5mA | |
| ECCN | EAR99 | |
| HTSUS | 8541.29.0095 | |
| IGBT Type | Trench Field Stop | |
| Input | Standard | |
| Input Capacitance (Cies) @ Vce | 28nF @ 25V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Chassis Mount | |
| NTC Thermistor | No | |
| Operating Temperature | -40В°C ~ 125В°C (TJ) | |
| Package | Bulk | |
| Package / Case | Module | |
| Power - Max | 2000W | |
| REACH Status | REACH Unaffected | |
| RoHS Status | ROHS3 Compliant | |
| Series | C -> | |
| Supplier Device Package | Module | |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 400A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Channel Type | N | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Continuous Collector Current | 580 A | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Operating Temperature | +125 °C | |
| Maximum Power Dissipation | 2 kW | |
| Minimum Operating Temperature | -40 °C | |
| Package Type | AG-62MM-1 | |
| Transistor Configuration | Series | |
| Вес, г | 365 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet FF400R12KE3HOSA1
pdf, 423 КБ
