SI1013CX-T1-GE3, 20V 450mA 190mW 760m ё@400mA,4.5V 1V@250uA P Channel SC-89 MOSFETs ROHS

SI1013CX-T1-GE3, 20V 450mA 190mW 760m ё@400mA,4.5V 1V@250uA P Channel SC-89 MOSFETs ROHS
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183 ֏
Кратность заказа 5 шт.
от 50 шт.152 ֏
от 150 шт.138 ֏
от 500 шт.130 ֏
Добавить в корзину 5 шт. на сумму 915 ֏
Номенклатурный номер: 8010730622

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 20
Maximum Gate Source Voltage (V) ±8
Maximum Continuous Drain Current (A) 0.45
Maximum Drain Source Resistance (mOhm) 760@4.5V
Typical Gate Charge @ Vgs (nC) 1.65@10V|1@2.5V
Typical Gate Charge @ 10V (nC) 1.65
Typical Input Capacitance @ Vds (pF) 45@10V
Maximum Power Dissipation (mW) 190
Typical Fall Time (ns) 8
Typical Rise Time (ns) 10
Typical Turn-Off Delay Time (ns) 10
Typical Turn-On Delay Time (ns) 9
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Standard Package Name SC
Supplier Package SC-89
Pin Count 3
Military No
Mounting Surface Mount
Package Height 0.8(Max)
Package Length 1.7(Max)
Package Width 0.95(Max)
PCB changed 3
Вес, г 0.003