MSC060SMA070S, Транзистор: N-MOSFET; SiC; полевой; 700В; 26А; Idm: 93А; 130Вт; D3PAK
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17 900 ֏
от 3 шт. —
14 200 ֏
от 10 шт. —
11 200 ֏
1 шт.
на сумму 17 900 ֏
Описание
N-канал 700V 37A (Tc) 130W (Tc) поверхностный монтаж D3PAK
Технические параметры
Case | D3PAK |
Drain current | 26A |
Drain-source voltage | 700V |
Gate charge | 56nC |
Kind of channel | enhanced |
Manufacturer | MICROCHIP(MICROSEMI) |
Mounting | SMD |
On-state resistance | 75mΩ |
Polarisation | unipolar |
Power dissipation | 130W |
Pulsed drain current | 93A |
Technology | SiC |
Type of transistor | N-MOSFET |
Base Product Number | MSC060 -> |
Current - Continuous Drain (Id) @ 25В°C | 37A (Tc) |
Drain to Source Voltage (Vdss) | 700V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 1175pF @ 700V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-268-3, DВіPak (2 Leads + Tab), TO-268AA |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 75mOhm @ 20A, 20V |
RoHS Status | RoHS Compliant |
Supplier Device Package | D3PAK |
Vgs (Max) | +23V, -10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Вес, г | 3.95 |
Техническая документация
Datasheet MSC060SMA070S
pdf, 1951 КБ