MSC060SMA070S, Транзистор: N-MOSFET; SiC; полевой; 700В; 26А; Idm: 93А; 130Вт; D3PAK

Фото 1/2 MSC060SMA070S, Транзистор: N-MOSFET; SiC; полевой; 700В; 26А; Idm: 93А; 130Вт; D3PAK
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см. техническую документацию
17 900 ֏
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от 10 шт.11 200 ֏
1 шт. на сумму 17 900 ֏
Номенклатурный номер: 8010854434
Бренд: Microsemi

Описание

N-канал 700V 37A (Tc) 130W (Tc) поверхностный монтаж D3PAK

Технические параметры

Case D3PAK
Drain current 26A
Drain-source voltage 700V
Gate charge 56nC
Kind of channel enhanced
Manufacturer MICROCHIP(MICROSEMI)
Mounting SMD
On-state resistance 75mΩ
Polarisation unipolar
Power dissipation 130W
Pulsed drain current 93A
Technology SiC
Type of transistor N-MOSFET
Base Product Number MSC060 ->
Current - Continuous Drain (Id) @ 25В°C 37A (Tc)
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On, Min Rds On) 20V
ECCN EAR99
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 1175pF @ 700V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 175В°C (TJ)
Package Tube
Package / Case TO-268-3, DВіPak (2 Leads + Tab), TO-268AA
Power Dissipation (Max) 130W (Tc)
Rds On (Max) @ Id, Vgs 75mOhm @ 20A, 20V
RoHS Status RoHS Compliant
Supplier Device Package D3PAK
Vgs (Max) +23V, -10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Вес, г 3.95

Техническая документация

Datasheet MSC060SMA070S
pdf, 1951 КБ