MSC025SMA120B, Транзистор: N-MOSFET; SiC; полевой; 1,2кВ; 73А; Idm: 275А; 500Вт
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57 200 ֏
от 3 шт. —
49 300 ֏
от 10 шт. —
42 400 ֏
1 шт.
на сумму 57 200 ֏
Описание
N-канал 1,2 кВ 103A (Tc) 500 Вт (Tc) сквозное отверстие TO-247-3
Технические параметры
| Case | TO247-3 |
| Drain current | 73A |
| Drain-source voltage | 1.2kV |
| Gate charge | 232nC |
| Kind of channel | enhanced |
| Manufacturer | MICROCHIP(MICROSEMI) |
| Mounting | THT |
| On-state resistance | 31mΩ |
| Polarisation | unipolar |
| Power dissipation | 500W |
| Pulsed drain current | 275A |
| Technology | SiC |
| Type of transistor | N-MOSFET |
| Base Product Number | MSC025 -> |
| Current - Continuous Drain (Id) @ 25В°C | 103A (Tc) |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 232nC @ 20V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 1000V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 500W (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Channel Type | N |
| Maximum Continuous Drain Current | 73 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Transistor Material | SiC |
| Вес, г | 6.14 |
Техническая документация
Datasheet MSC025SMA120B
pdf, 1244 КБ
