SIR626ADP-T1-RE3
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см. техническую документацию
см. техническую документацию
5 100 ֏
от 2 шт. —
4 450 ֏
от 5 шт. —
4 040 ֏
от 10 шт. —
3 850 ֏
1 шт.
на сумму 5 100 ֏
Описание
Электроэлемент
Mosfet, N-Ch, 60V, 165A, 150Deg C, 104W Rohs Compliant: Yes |Vishay SIR626ADP-T1-RE3
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 165 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 104 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Rds On - Drain-Source Resistance: | 1.75 mOhms |
| REACH - SVHC: | Details |
| Series: | SiR626ADP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 165 A |
| Maximum Drain Source Resistance | 0.00175 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK SO-8 |
| Pin Count | 8 |
| Series | SiR626ADP |
Техническая документация
Datasheet
pdf, 179 КБ
Документация
pdf, 236 КБ
