P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
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760 ֏
Кратность заказа 10 шт.
Добавить в корзину 10 шт.
на сумму 7 600 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 9.6 A |
| Maximum Drain Source Resistance | 26 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 27.8 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -50 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK 1212-8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Width | 3.15mm |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-1212-8 |
| Part # Aliases: | SI7121DN-GE3 |
| Pd - Power Dissipation: | 27.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 50 nC |
| Rds On - Drain-Source Resistance: | 26 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 3 |
