N-Channel MOSFET, 3.5 A, 100 V, 3-Pin SOT-23 SSM3K361R

Изображения служат только для ознакомления,
см. техническую документацию

525 шт., срок 8 недель

620 ֏

Кратность заказа 25 шт.

25 шт. на сумму 15 500 ֏

Номенклатурный номер: 8012776285

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\MOSFETs

Power Management Switches DC-DC Converters 175 MOSFET 4.5 V drive Low drain-source on-resistance RDS(ON) = 65 mΩ (typ.

Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.5V
Maximum Continuous Drain Current	3.5 A
Maximum Drain Source Resistance	92 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	2.4 W
Minimum Gate Threshold Voltage	1.5V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	3.2 nC @ 4.5 V
Width	1.8mm
Brand	Toshiba
Configuration	Single
Factory Pack Quantity	3000
Fall Time	9 ns
Height	0.9 mm
Id - Continuous Drain Current	3.5 A
Length	2.9 mm
Manufacturer	Toshiba
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-23-3
Packaging	Cut Tape
Pd - Power Dissipation	1.2 W
Product	MOSFETs
Product Category	MOSFET
Qg - Gate Charge	3.2 nC
Rds On - Drain-Source Resistance	92 mOhms
Rise Time	7 ns
RoHS	Details
Series	SSM3K36
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	21 ns
Typical Turn-On Delay Time	16 ns
Unit Weight	0.000282 oz
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Вес, г	3