IPD100N04S4-02, Транзисторы и сборки MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
484 ֏
1 шт.
на сумму 484 ֏
Описание
транзисторы полевые импортные
Описание Транзистор N-МОП, полевой, 40В 100А To252-3
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 24 ns |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Part # Aliases: | SP000646184 IPD1N4S42XT IPD100N04S402ATMA1 |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 91 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Rise Time: | 12 ns |
| Series: | OptiMOS-T2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 26 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.564 |
Техническая документация
Datasheet
pdf, 153 КБ
