DXT5551P5-13, TRANS NPN 160V 0.6A POWERDI5

DXT5551P5-13, TRANS NPN 160V 0.6A POWERDI5
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256 ֏
Кратность заказа 10 шт.
от 100 шт.203 ֏
от 500 шт.159 ֏
от 5000 шт.134 ֏
10 шт. на сумму 2 560 ֏
Номенклатурный номер: 8014284051
Бренд: DIODES INC.

Описание

PowerDI 5 Bipolar Transistors

Diodes Incorporated PowerDI ® 5 Bipolar Transistors are the first bipolar transistors in a PowerDI 5 package, which provides a 47% space savings over the SOT223 package. These Diodes Incorporated PowerDI 5 bipolar transistors are also 60% smaller than DPAK (TO252) package devices.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 200 mV
Configuration: Single
Continuous Collector Current: 600 mA
DC Collector/Base Gain hFE Min: 30 at 50 mA, 5 V
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 5000
Gain Bandwidth Product fT: 130 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package/Case: PowerDI-5
Pd - Power Dissipation: 700 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: DXT5551
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
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