IPW60R041C6FKSA1, транзистор 600В TO-247
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см. техническую документацию
см. техническую документацию
17 200 ֏
от 2 шт. —
16 100 ֏
от 8 шт. —
14 000 ֏
от 14 шт. —
13 900 ֏
1 шт.
на сумму 17 200 ֏
Описание
транзисторы полевые импортные
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families.
Технические параметры
| Корпус | TO-247-3 | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 77.5 A | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Maximum Drain Source Voltage | 650 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 481 W | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Series | CoolMOS C6 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 290 nC @ 10 V | |
| Width | 5.21mm | |
| Transistor Polarity | N Channel; Continuous Drain Current Id | |
| Вес, г | 8.165 |
