N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON CSD16301Q2
![N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON CSD16301Q2](https://static.chipdip.ru/lib/028/DOC024028319.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
234 ֏
Кратность заказа 3000 шт.
3000 шт.
на сумму 702 000 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
MOSFET,N CH,25V,5A,SON-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:2.3W; Transistor Case Style:SON; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:10V
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 5 A |
Maximum Drain Source Resistance | 34 mΩ |
Maximum Drain Source Voltage | 25 V |
Maximum Gate Source Voltage | -8 V, +10 V |
Maximum Gate Threshold Voltage | 1.55V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.3 W |
Minimum Gate Threshold Voltage | 0.9V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | WSON |
Pin Count | 6 |
Series | NexFET |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
Width | 2mm |
Brand | Texas Instruments |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 1.7 ns |
Forward Transconductance - Min | 16.5 S |
Height | 0.75 mm |
Id - Continuous Drain Current | 22 A |
Length | 2 mm |
Manufacturer | Texas Instruments |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | WSON-FET-6 |
Packaging | Cut Tape |
Pd - Power Dissipation | 2.3 W |
Product Category | MOSFET |
Qg - Gate Charge | 2 nC |
Rds On - Drain-Source Resistance | 29 mOhms |
Rise Time | 4.4 ns |
RoHS | Details |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 4.1 ns |
Typical Turn-On Delay Time | 2.7 ns |
Unit Weight | 0.000307 oz |
Vds - Drain-Source Breakdown Voltage | 25 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Continuous Drain Current (Id) | 5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 24mΩ@8V, 4A |
Drain Source Voltage (Vdss) | 25V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.55V@250uA |
Input Capacitance (Ciss@Vds) | 340pF@12.5V |
Power Dissipation (Pd) | 2.3W |
Total Gate Charge (Qg@Vgs) | 2.8nC@4.5V |
Type | 1PCSNChannel |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet CSD16322Q5
pdf, 466 КБ