N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.5V |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Resistance | 7.5 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 680 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Screw Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-227 |
| Pin Count | 4 |
| Series | Polar HiPerFET |
| Typical Gate Charge @ Vgs | 235 nC @ 10 V |
| Width | 25.07mm |
| Brand: | IXYS |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Fall Time: | 90 ns |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Screw Mounts |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-227-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 680 W |
| Product Category: | Discrete Semiconductor Modules |
| Product Type: | Discrete Semiconductor Modules |
| Product: | Power MOSFET Modules |
| Rds On - Drain-Source Resistance: | 7.5 mOhms |
| Rise Time: | 35 ns |
| Series: | IXFN200N10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Type: | HiperFET |
| Typical Turn-Off Delay Time: | 150 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Вес, г | 1 |
