N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 12 A |
Maximum Drain Source Resistance | 1.3 Ω |
Maximum Drain Source Voltage | 1000 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 400 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247 |
Pin Count | 3 |
Series | Linear |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 155 nC @ 20 V |
Width | 5.3mm |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXTH12N100L MOSFET
pdf, 85 КБ