MOSFET SIHP25N50E-GE3
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см. техническую документацию
см. техническую документацию
5 100 ֏
Кратность заказа 5 шт.
Добавить в корзину 5 шт.
на сумму 25 500 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V.
Технические параметры
| Base Product Number | SIHP25 -> |
| Current - Continuous Drain (Id) @ 25В°C | 26A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1980pF @ 100V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 12A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Manufacturer | Vishay Siliconix |
| Packaging | Tube |
| Part Status | Active |
| Вес, г | 1 |
