MOSFET IRF830ALPBF
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay MOSFET is an N-channel, TO-263 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-262-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 3.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Rds On - Drain-Source Resistance: | 1.4 Ohms |
| Series: | IRF |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 238 КБ
Datasheet IRF830ALPBF
pdf, 180 КБ
