N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8L SQJA42EP-T1_GE3

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1 870 ֏

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Номенклатурный номер: 8014515489

Semiconductors\Discrete Semiconductors\MOSFETs

Automotive N-Channel 40 V (D-S) 175 °C MOSFET. TrenchFET® power MOSFET

Automotive Standard	AEC-Q101
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	20 A
Maximum Drain Source Resistance	16 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	2.3V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	27 W
Minimum Gate Threshold Voltage	1.3V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	PowerPAK SO-8L
Pin Count	8
Transistor Configuration	Single
Typical Gate Charge @ Vgs	22 nC @ 10 V
Width	4.47mm
Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	25 ns
Forward Transconductance - Min:	32 S
Id - Continuous Drain Current:	20 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-SO-8-4
Pd - Power Dissipation:	27 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	33 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	9.4 mOhms
Rise Time:	4 ns
Series:	SQJA
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Вес, г	1