Diodes Inc BC846A-7-F NPN Transistor, 100 mA, 65 V, 3-Pin SOT-23
![Фото 1/4 Diodes Inc BC846A-7-F NPN Transistor, 100 mA, 65 V, 3-Pin SOT-23](https://static.chipdip.ru/lib/735/DOC043735678.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/763/DOC016763557.jpg)
![](https://static.chipdip.ru/lib/838/DOC025838983.jpg)
![](https://static.chipdip.ru/lib/472/DOC018472444.jpg)
93 ֏
Кратность заказа 250 шт.
250 шт.
на сумму 23 250 ֏
Описание
Semiconductors\Discrete Semiconductors\Bipolar Transistors
Описание Транзистор: NPN, биполярный, 65В, 0,1А, 350мВт, SOT23 Характеристики Категория | Транзистор |
Тип | биполярный |
Вид | NPN |
Технические параметры
Maximum Collector Base Voltage | 80 V |
Maximum Collector Emitter Voltage | 65 V |
Maximum DC Collector Current | 100 mA |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 300 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 300 mW |
Minimum DC Current Gain | 110 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 80 V |
Collector- Emitter Voltage VCEO Max: | 65 V |
Collector-Emitter Saturation Voltage: | 200 mV |
Configuration: | Single |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 300 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 310 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BC846 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Collector Current (Ic) | 100mA |
Collector Cut-Off Current (Icbo) | 15nA |
Collector-Emitter Breakdown Voltage (Vceo) | 65V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA, 5mA |
DC Current Gain (hFE@Ic,Vce) | 110@2mA, 5V |
Operating Temperature | -65℃~+150℃@(Tj) |
Power Dissipation (Pd) | 300mW |
Transition Frequency (fT) | 300MHz |
Вес, г | 1 |
Техническая документация
BC846...BC848
pdf, 299 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 297 КБ
Datasheet BC846A-7-F
pdf, 142 КБ