F475R06W1E3BOMA1 Emitter-Collector, Quad (2 x Dual) IGBT Module, 100 A 600 V
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The infineon IGBT module is suitable for auxiliary inverters, UPS systems, inductive heating and welding and solar applications etc.
Технические параметры
| Configuration | Emitter-Collector, Quad(2 x Dual) |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 100 A |
| Maximum Gate Emitter Voltage | +/-20V |
| Maximum Power Dissipation | 275 W |
| Number of Transistors | 4 |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 100 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 275000 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Packaging | Tray |
| Part Status | Active |
| PCB changed | 15 |
| Pin Count | 15 |
| PPAP | No |
| Supplier Package | EASY1B-1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.45 |
Техническая документация
Datasheet F475R06W1E3BOMA1
pdf, 789 КБ
Datasheet F475R06W1E3BOMA1
pdf, 750 КБ
