FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.
Технические параметры
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 39 A |
| Maximum Gate Emitter Voltage | +/-20V |
| Maximum Power Dissipation | 175 W |
| Number of Transistors | 7 |
| Base Product Number | FP25R12 -> |
| Configuration | Three Phase Inverter |
| Current - Collector (Ic) (Max) | 39A |
| Current - Collector Cutoff (Max) | 1mA |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 1.45nF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Chassis Mount |
| NTC Thermistor | Yes |
| Operating Temperature | -40В°C ~ 150В°C (TJ) |
| Package | Bulk |
| Package / Case | Module |
| Power - Max | 175W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
Техническая документация
Datasheet
pdf, 678 КБ
