FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc. Electrical Features
Технические параметры
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 75 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 385 W |
Number of Transistors | 7 |
Base Product Number | FP75R12 -> |
Configuration | Three Phase Inverter |
Current - Collector (Ic) (Max) | 75A |
Current - Collector Cutoff (Max) | 1mA |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
IGBT Type | Trench Field Stop |
Input | Standard |
Input Capacitance (Cies) @ Vce | 4.3nF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Chassis Mount |
NTC Thermistor | Yes |
Operating Temperature | -40В°C ~ 150В°C (TJ) |
Package | Bulk |
Package / Case | Module |
Power - Max | 385W |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | Module |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 75A |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Вес, г | 1 |
Техническая документация
Datasheet FP75R12KT4B11BOSA1
pdf, 867 КБ