IRFS4010TRL7PP, Транзистор
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см. техническую документацию
см. техническую документацию
8 700 ֏
1 шт.
на сумму 8 700 ֏
Описание
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.3V |
| Maximum Continuous Drain Current | 190 A |
| Maximum Drain Source Resistance | 4 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 380 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK-7 |
| Pin Count | 7 |
| Series | HEXFET |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Width | 9.65mm |
| Continuous Drain Current | 190(A) |
| Drain-Source On-Volt | 100(V) |
| Gate-Source Voltage (Max) | ±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 175C |
| Operating Temperature Classification | Military |
| Packaging | Tape and Reel |
| Polarity | N |
| Power Dissipation | 380(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 2.34 |
