SI3459BDV-T1-GE3, Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
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Кратность заказа 3000 шт.
Добавить в корзину 3000 шт.
на сумму 681 000 ֏
Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Si3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 10 ns |
Id - Continuous Drain Current: | 2.9 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TSOP-6 |
Part # Aliases: | SI3459BDV-T1-BE3 SI3459BDV-GE3 |
Pd - Power Dissipation: | 3.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7.7 nC |
Rds On - Drain-Source Resistance: | 216 mOhms |
Rise Time: | 12 ns |
Series: | SI3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 253 КБ