IRFU420
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см. техническую документацию
см. техническую документацию
970 ֏
от 2 шт. —
710 ֏
1 шт.
на сумму 970 ֏
Описание
Электроэлемент
Описание Транзистор N-MOSFET, полевой, 500В, 1,5А, 42Вт, IPAK
Технические параметры
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 16 ns |
| Height | 6.22 mm |
| Id - Continuous Drain Current | 2.4 A |
| Length | 6.73 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-251-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Rise Time | 8.6 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 8 ns |
| Unit Weight | 0.01164 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 2.39 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 2.4 A |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | IPAK(TO-251) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 19(Maximumn)nC |
| Вес, г | 0.658 |
