SI4850EY-T1-GE3, Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R
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540 ֏
Кратность заказа 2500 шт.
Добавить в корзину 2500 шт.
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Si4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
Brand | Vishay/Siliconix |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 12 ns |
Forward Transconductance - Min | 25 S |
Id - Continuous Drain Current | 8.5 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | SO-8 |
Packaging | Cut Tape or Reel |
Part # Aliases | SI4850EY-GE3 |
Pd - Power Dissipation | 3.3 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 18 nC |
Rds On - Drain-Source Resistance | 22 mOhms |
Rise Time | 10 ns |
Series | SI4 |
Subcategory | MOSFETs |
Technology | Si |
Tradename | TrenchFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 10 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 1 V |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 12 ns |
Forward Transconductance - Min: | 25 S |
Id - Continuous Drain Current: | 8.5 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOIC-8 |
Part # Aliases: | SI4850EY-GE3 |
Pd - Power Dissipation: | 3.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 18 nC |
Rds On - Drain-Source Resistance: | 22 mOhms |
Rise Time: | 10 ns |
Series: | SI4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Channel Type | N |
Maximum Continuous Drain Current | 8.5 A |
Maximum Drain Source Resistance | 47 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Power Dissipation | 3.3 W |
Minimum Gate Threshold Voltage | 1V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOIC |
Pin Count | 8 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 18 nC @ 10 V |
Width | 4mm |
Вес, г | 1 |