CSD16327Q3, Trans MOSFET N-CH Si 25V 60A 8-Pin VSON-CLIP EP T/R
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
484 ֏
Мин. кол-во для заказа 280 шт.
280 шт.
на сумму 135 520 ֏
Описание
NexFET N-Channel Power MOSFETs
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.2 nC |
| Rds On - Drain-Source Resistance: | 4.8 mOhms |
| Series: | CSD16327Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| T ;ROHS COMPLIANT | YESC ; C D C I |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 449 КБ
