P-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-E3

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Номенклатурный номер: 8016680000

Semiconductors\Discrete Semiconductors\MOSFETs

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 112mohm at a gate-source voltage of 4.

Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	3.1 A
Maximum Drain Source Resistance	0.112 O
Maximum Drain Source Voltage	20 V
Maximum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Series	TrenchFET
Base Product Number	SI2301 ->
Current - Continuous Drain (Id) @ 25В°C	3.1A (Tc)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	1V @ 250ВµA
Вес, г	1