N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXFH60N65X2

Фото 1/3 N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXFH60N65X2
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18 700 ֏
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Номенклатурный номер: 8017145356
Бренд: Ixys Corporation

Описание

Semiconductors\Discrete Semiconductors\MOSFETs
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency.

Технические параметры

Channel Mode Enhancement
Channel Type N
Forward Diode Voltage 1.4V
Maximum Continuous Drain Current 60 A
Maximum Drain Source Resistance 52 mΩ
Maximum Drain Source Voltage 650 V
Maximum Gate Source Voltage ±30 V
Maximum Gate Threshold Voltage 5V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 780 W
Minimum Gate Threshold Voltage 3.5V
Minimum Operating Temperature -55 °C
Mounting Type Through Hole
Number of Elements per Chip 1
Package Type TO-247
Pin Count 3
Series HiperFET
Transistor Configuration Single
Typical Gate Charge @ Vgs 108 nC @ 10 V
Width 5.21mm

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet IXFH60N65X2HV
pdf, 150 КБ
IXFH60N65X2
pdf, 316 КБ