Diodes Inc BC846BLP4-7B NPN Transistor, 100 mA, 65 V, 3-Pin X2-DFN1006
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58 ֏
Кратность заказа 100 шт.
100 шт.
на сумму 5 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Bipolar Transistors
Технические параметры
Maximum Collector Base Voltage | 80 V |
Maximum Collector Emitter Voltage | 65 V |
Maximum DC Collector Current | 100 mA |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 300 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1 W |
Minimum DC Current Gain | 200 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | X2-DFN1006 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | NPN |
Collector Emitter Voltage Max | 65В |
Continuous Collector Current | 100мА |
DC Current Gain hFE Min | 200hFE |
DC Усиление Тока hFE | 200hFE |
Power Dissipation | 460мВт |
Квалификация | - |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | BC846 |
Максимальная Рабочая Температура | 150°C |
Монтаж транзистора | Surface Mount |
Полярность Транзистора | NPN |
Стиль Корпуса Транзистора | X2-DFN1006 |
Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Частота Перехода ft | 300МГц |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 80 V |
Collector- Emitter Voltage VCEO Max: | 65 V |
Collector-Emitter Saturation Voltage: | 220 mV |
Configuration: | Single |
Continuous Collector Current: | 200 mA |
DC Collector/Base Gain hfe Min: | 200 at 2 mA, 5 V |
DC Current Gain hFE Max: | 450 at 2 mA, 5 V |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 10000 |
Gain Bandwidth Product fT: | 300 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | X2-DFN1006-3 |
Pd - Power Dissipation: | 460 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BC846 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 1 |