P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Industrial Power SolutionsVishay offers one of the industry"s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Resistance | 9 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 57 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK 1212-8 |
| Pin Count | 8 |
| Series | TrenchFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 92 nC @ 10 V |
| Width | 3.3mm |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 52 S |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-1212-8 |
| Pd - Power Dissipation: | 57 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 92 nC |
| Rds On - Drain-Source Resistance: | 5.6 mOhms |
| Rise Time: | 5 ns |
| Series: | SIS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET, PowerPAK |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 65 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
