SI2309CDS-T1-E3, 60V 1.6A 345m@1.25A,10V 3V@250uA 1PCSPChannel TO-236-3 MOSFETs ROHS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SI2 Series TrenchFET® Power MOSFETsVishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
Brand | Vishay/Siliconix |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 10 ns |
Forward Transconductance - Min | 2.8 S |
Id - Continuous Drain Current | 1.6 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Cut Tape or Reel |
Part # Aliases | SI2309CDS-E3 |
Pd - Power Dissipation | 1.7 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 4.1 nC |
Rds On - Drain-Source Resistance | 345 mOhms |
Rise Time | 10 ns |
Series | SI2 |
Subcategory | MOSFETs |
Technology | Si |
Tradename | TrenchFET |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 5 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 1 V |
Vgs Th - Gate-Source Threshold Voltage | 1 V |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 2.8 S |
Id - Continuous Drain Current: | 1.6 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Part # Aliases: | SI2309CDS-T1-BE3 SI2309CDS-E3 |
Pd - Power Dissipation: | 1.7 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 4.1 nC |
Rds On - Drain-Source Resistance: | 345 mOhms |
Rise Time: | 10 ns |
Series: | SI2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 15 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 170 КБ