IPL60R199CP, МОП-транзистор 600V CoolMOSCP Power Transistor
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см. техническую документацию
см. техническую документацию
4 270 ֏
от 10 шт. —
3 520 ֏
от 30 шт. —
3 150 ֏
1 шт.
на сумму 4 270 ֏
Описание
VSON-4-EP(8.1x8.1) MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Id - Continuous Drain Current: | 16.4 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | ThinPAK-5 |
| Part # Aliases: | IPL6R199CPXT SP000841892 IPL60R199CPAUMA1 |
| Pd - Power Dissipation: | 139 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 32 nC |
| Rds On - Drain-Source Resistance: | 199 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 50 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.29 |
Техническая документация
Datasheet
pdf, 1336 КБ
Infineon Technologies IPL60R199CP
pdf, 1399 КБ
