IXFN132N50P3, Транзистор N-МОП, полевой, 500В 112A 1500Вт 0,039Ом SOT227B
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Описание
Описание Транзистор N-МОП, полевой, 500В 112A 1500Вт 0,039Ом SOT227B Характеристики
| Категория | Транзистор |
| Тип | модуль |
| Вид | MOSFET |
Технические параметры
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 112A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 18600pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 1500W (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 66A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | HiPerFETв„ў, Polar3в„ў -> |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 112 A |
| Maximum Drain Source Resistance | 39 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.5 kW |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | SOT-227 |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V |
| Width | 25.07mm |
| Brand: | IXYS |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 112 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Screw Mounts |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-227-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.5 kW |
| Product Category: | Discrete Semiconductor Modules |
| Product Type: | Discrete Semiconductor Modules |
| Product: | Power MOSFET Modules |
| Rds On - Drain-Source Resistance: | 39 mOhms |
| Rise Time: | 9 ns |
| Series: | IXFN132N50 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Type: | HiperFET |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Вес, г | 30 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet IXFN132N50P3
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Datasheet IXFN132N50P3
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