CSD87502Q2T, Транзистор: N-MOSFET, полевой, 30В, 5А, 2,3Вт, WSON6, 2x2мм
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1 190 ֏
от 10 шт. —
710 ֏
от 30 шт. —
620 ֏
1 шт.
на сумму 1 190 ֏
Описание
Описание Транзистор: N-MOSFET, полевой, 30В, 5А, 2,3Вт, WSON6, 2x2мм Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Continuous Drain Current (Id) | 5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 32.4mΩ@4A, 10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Input Capacitance (Ciss@Vds) | 353pF@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.3W |
| Total Gate Charge (Qg@Vgs) | 6nC@10V |
| Type | 2 N-Channel |
| Base Product Number | CSD87502 -> |
| Current - Continuous Drain (Id) @ 25В°C | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate, 5V Drive |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 15V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-WDFN Exposed Pad |
| Power - Max | 2.3W |
| Rds On (Max) @ Id, Vgs | 32.4mOhm @ 4A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 6-WSON (2x2) |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 3 ns, 3 ns |
| Forward Transconductance - Min: | 75 S, 75 S |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | WSON-FET-6 |
| Pd - Power Dissipation: | 2.3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Rise Time: | 11 ns, 11 ns |
| Series: | CSD87502Q2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns, 12 ns |
| Typical Turn-On Delay Time: | 3 ns, 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.13 |
