AUIRF540Z, Транзистор: N-MOSFET, полевой, 100В, 36А, 92Вт, TO220AB

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1 850 ֏

от 10 шт. — 1 320 ֏

от 50 шт. — 1 150 ֏

от 100 шт. — 1 030 ֏

1 шт. на сумму 1 850 ֏

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Номенклатурный номер: 8017538823

Описание Транзистор: N-MOSFET, полевой, 100В, 36А, 92Вт, TO220AB Характеристики

Base Product Number	AUIRF540 ->
Current - Continuous Drain (Id) @ 25В°C	36A (Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	92W (Tc)
Rds On (Max) @ Id, Vgs	26.5mOhm @ 22A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	HEXFETВ® ->
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	36 A
Maximum Drain Source Resistance	26.5 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	92 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	42 nC @ 10 V
Width	4.82mm
Вес, г	1.98