MMBTA06-7-F, Транзистор NPN, биполярный, 80В, 500мА, 350мВт, SOT23
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см. техническую документацию
см. техническую документацию
44 ֏
Кратность заказа 20 шт.
от 200 шт. —
27 ֏
от 600 шт. —
21 ֏
от 3000 шт. —
16 ֏
20 шт.
на сумму 880 ֏
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Configuration: | Single |
| Continuous Collector Current: | 500 mA |
| Emitter- Base Voltage VEBO: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 310 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | MMBTA06 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | 80 V |
| Maximum DC Collector Current | 500 mA |
| Maximum Emitter Base Voltage | 4 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Вес, г | 0.02 |
