IXTP3N100P, Транзистор N-MOSFET, 1кВ, 3А, 125Вт, TO220-3, 820нс
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Описание
1kV 3A 4.8Ω@10V,1.5A 125W 4.5V@250uA N Channel TO-220 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.8Ω@10V, 1.5A |
| Drain Source Voltage (Vdss) | 1kV |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@250uA |
| Input Capacitance (Ciss@Vds) | 1.1nF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 125W |
| Total Gate Charge (Qg@Vgs) | 39nC@10V |
| Type | N Channel |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 50 |
| Fall Time: | 29 ns |
| Forward Transconductance - Min: | 1.5 S |
| Id - Continuous Drain Current: | 3 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 125 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 39 nC |
| Rds On - Drain-Source Resistance: | 4.8 Ohms |
| Rise Time: | 27 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Polar Power MOSFET |
| Typical Turn-Off Delay Time: | 75 ns |
| Typical Turn-On Delay Time: | 22 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.8 V |
| Вес, г | 3 |
Техническая документация
Datasheet
pdf, 356 КБ
Datasheet IXTP3N100P
pdf, 150 КБ
