IXTQ60N20T, Транзистор N-MOSFET, 200В, 60А, 500Вт, TO3P, 118нс
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Описание
200V 60A 500W 40mΩ@10V,30A 5V@250uA N Channel TO-3P-3 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 60A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 40mΩ@10V, 30A |
| Drain Source Voltage (Vdss) | 200V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Input Capacitance (Ciss@Vds) | 4.53nF@25V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 500W |
| Total Gate Charge (Qg@Vgs) | 73nC@10V |
| Type | N Channel |
| Case | TO3P |
| Drain current | 60A |
| Drain-source voltage | 200V |
| Features of semiconductor devices | thrench gate power mosfet |
| Gate charge | 73nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 40mΩ |
| Polarisation | unipolar |
| Power dissipation | 500W |
| Reverse recovery time | 118ns |
| Type of transistor | N-MOSFET |
| Вес, г | 5.295 |
Техническая документация
Datasheet IXTP60N20T
pdf, 138 КБ
