BC847BVC-7, Транзистор: NPN; биполярный
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см. техническую документацию
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102 ֏
Кратность заказа 5 шт.
от 50 шт. —
71 ֏
от 150 шт. —
53 ֏
от 500 шт. —
44 ֏
5 шт.
на сумму 510 ֏
Описание
Trans GP BJT NPN 45V 0.1A 150mW 6-Pin SOT-563 T/R
Технические параметры
Automotive | No |
Configuration | Dual |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Flat |
Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
Maximum Collector Base Voltage (V) | 50 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.1 0.5mA 10mA|0.3 5mA 100mA |
Maximum Collector-Emitter Voltage (V) | 45 |
Maximum DC Collector Current (A) | 0.1 |
Maximum Emitter Base Voltage (V) | 6 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 150 |
Maximum Transition Frequency (MHz) | 100(Min) |
Minimum DC Current Gain | 200 2mA 5V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 6 |
Pin Count | 6 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT-563 |
Supplier Package | SOT-563 |
Type | NPN |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 50 V |
Collector- Emitter Voltage VCEO Max: | 45 V |
Collector-Emitter Saturation Voltage: | 300 mV |
Configuration: | Dual |
DC Collector/Base Gain hfe Min: | 200 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 100 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-563-6 |
Pd - Power Dissipation: | 150 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BC847B |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 0.03 |