MMBT5551-7-F, Транзистор: NPN, биполярный, 160В, 0,6А, 300мВт, SOT23
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49 ֏
Кратность заказа 20 шт.
от 200 шт. —
31 ֏
от 600 шт. —
24 ֏
от 3000 шт. —
18 ֏
20 шт.
на сумму 980 ֏
Описание
Описание Транзистор: NPN, биполярный, 160В, 0,6А, 300мВт, SOT23 Характеристики
Категория | Транзистор |
Тип | биполярный |
Вид | NPN |
Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
PCB changed | 3 |
Package Height | 0.98 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Package Width | 1.3 |
Package Length | 2.9 |
Type | NPN |
Product Category | Bipolar Small Signal |
Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Collector Base Voltage (V) | 180 |
Maximum Collector-Emitter Voltage (V) | 160 |
Maximum Emitter Base Voltage (V) | 6 |
Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA |
Maximum DC Collector Current (A) | 0.6 |
Maximum Collector Cut-Off Current (nA) | 50 |
Minimum DC Current Gain | 80@1mA@5V|30@50mA@5V|80@10mA@5V |
Maximum Power Dissipation (mW) | 300 |
Maximum Transition Frequency (MHz) | 300 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Temperature Grade | Automotive |
Packaging | Tape and Reel |
Automotive | No |
Supplier Package | SOT-23 |
Pin Count | 3 |
Standard Package Name | SOT-23 |
Military | No |
Collector-Emitter Breakdown Voltage | 160V |
Maximum DC Collector Current | 600mA |
Pd - Power Dissipation | 300mW |
Transistor Type | NPN |
Maximum Collector Base Voltage | 180 V |
Maximum Collector Emitter Voltage | 160 V |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 300 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 300 mW |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 180 V |
Collector- Emitter Voltage VCEO Max: | 160 V |
Collector-Emitter Saturation Voltage: | 200 mV |
Configuration: | Single |
Continuous Collector Current: | 600 mA |
DC Collector/Base Gain hfe Min: | 80 |
DC Current Gain hFE Max: | 250 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 300 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 300 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMBT5551 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 0.03 |
Техническая документация
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