CSD18543Q3A, Транзистор MOSFET DFN8
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см. техническую документацию
см. техническую документацию
710 ֏
от 10 шт. —
396 ֏
от 30 шт. —
330 ֏
от 100 шт. —
266 ֏
1 шт.
на сумму 710 ֏
Описание
Описание Транзистор MOSFET DFN8
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 4 ns |
| Forward Transconductance - Min: | 40 S |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 66 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.1 nC |
| Rds On - Drain-Source Resistance: | 12 mOhms |
| Rise Time: | 18 ns |
| Series: | CSD18543Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 1.2e+006 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Material | Si |
| Brand | Texas Instruments |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 4 ns |
| Forward Transconductance - Min | 40 S |
| Height | 0.9 mm |
| Id - Continuous Drain Current | 60 A |
| Length | 3.15 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSONP-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 66 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14.5 nC |
| Rds On - Drain-Source Resistance | 8.1 mOhms |
| Rise Time | 18 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 8 ns |
| Typical Turn-On Delay Time | 9 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Width | 3 mm |
| Вес, г | 0.2 |
Техническая документация
Datasheet CSD18543Q3AT
pdf, 433 КБ
