MMBT3906T-7-F, Транзистор: PNP
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40 ֏
от 300 шт. —
28 ֏
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на сумму 580 ֏
Описание
Transistors/Thyristors\Bipolar (BJT)
Trans GP BJT PNP 40V 0.2A 150mW 3-Pin SOT-523 T/R
Технические параметры
Collector Current (Ic) | 200mA |
Collector Cut-Off Current (Icbo) | 50nA |
Collector-Emitter Breakdown Voltage (Vceo) | 40V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@50mA, 5mA |
DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
Power Dissipation (Pd) | 150mW |
Transistor Type | PNP |
Transition Frequency (fT) | 250MHz |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 0.85 1mA 10mA|0.95 5mA 50mA |
Maximum Collector Base Voltage (V) | 40 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.25 1mA 10mA|0.4 5mA 50mA |
Maximum Collector-Emitter Voltage (V) | 40 |
Maximum DC Collector Current (A) | 0.2 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 150 |
Maximum Transition Frequency (MHz) | 250(Min) |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-523 |
Type | PNP |
Maximum Collector Base Voltage | -40 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum DC Collector Current | 200 mA |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Frequency | 250 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 150 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Surface Mount |
Package Type | SOT-523(SC-89) |
Transistor Configuration | Single |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 400 mV |
Configuration: | Single |
Continuous Collector Current: | -200 mA |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 140 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 200 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-523-3 |
Pd - Power Dissipation: | 150 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMBT39 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 172 КБ
Datasheet MMBT3906T-7
pdf, 422 КБ
Datasheet MMBT3906T-7-F
pdf, 402 КБ