MMST4401-7-F, Транзистор: NPN

Фото 1/2 MMST4401-7-F, Транзистор: NPN
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см. техническую документацию
62 ֏
Кратность заказа 10 шт.
от 100 шт.40 ֏
от 300 шт.31 ֏
10 шт. на сумму 620 ֏
Номенклатурный номер: 8017548591
Бренд: DIODES INC.

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO 60 V
Collector- Emitter Voltage VCEO Max 40 V
Configuration Single
DC Collector/Base Gain Hfe Min 20
Emitter- Base Voltage VEBO 6 V
Factory Pack Quantity 3000
Gain Bandwidth Product FT 250 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current 0.6 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-323-3
Packaging Cut Tape or Reel
Pd - Power Dissipation 200 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series MMST44
Subcategory Transistors
Transistor Polarity NPN
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 750 mV
Configuration: Single
DC Collector/Base Gain hfe Min: 20
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 250 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-323-3
Pd - Power Dissipation: 200 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: MMST44
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.1

Техническая документация

Datasheet MMST4401-7-F
pdf, 134 КБ
Datasheet MMST4401-7-F
pdf, 92 КБ