SBR40U100CT, Диод: выпрямительный Шоттки
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1 740 ֏
от 10 шт. —
1 070 ֏
от 50 шт. —
780 ֏
от 100 шт. —
710 ֏
1 шт.
на сумму 1 740 ֏
Описание
SBR® Super Barrier Rectifiers Diodes Inc SBR® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Технические параметры
Average Rectified Current (Io) | 40A |
Diode Configuration | Dual Common Cathode |
Forward Voltage (Vf) @ If | 670mV@20A |
Reverse Leakage Current | 500uA@100V |
Reverse Voltage (Vr) | 100V |
Brand: | Diodes Incorporated |
Configuration: | Dual Anode Common Cathode |
Factory Pack Quantity: | 50 |
If - Forward Current: | 40 A |
Ifsm - Forward Surge Current: | 300 A |
Ir - Reverse Current: | 500 uA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | Through Hole |
Package / Case: | TO-220AB-3 |
Packaging: | Tube |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Rectifiers |
Subcategory: | Diodes & Rectifiers |
Technology: | Si |
Termination Style: | Solder Pin |
Type: | Schottky Diode |
Vf - Forward Voltage: | 830 mV |
Vrrm - Repetitive Reverse Voltage: | 100 V |
Вес, г | 2 |
Техническая документация
Datasheet SBR40U100CT
pdf, 96 КБ
Диоды импортные
pdf, 304 КБ