MJD32CUQ-13, Транзистор: PNP; биполярный; 100В; 3А; 15Вт; DPAK

MJD32CUQ-13, Транзистор: PNP; биполярный; 100В; 3А; 15Вт; DPAK
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см. техническую документацию
530 ֏
от 10 шт.348 ֏
от 30 шт.260 ֏
от 100 шт.211 ֏
1 шт. на сумму 530 ֏
Номенклатурный номер: 8017550402
Бренд: DIODES INC.

Описание

Automotive Bipolar Junction Transistors (BJT)
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.

Технические параметры

Collector Emitter Voltage Max 100В
Continuous Collector Current
DC Current Gain hFE Min 10hFE
DC Усиление Тока hFE 10hFE
Power Dissipation 15Вт
Квалификация AEC-Q101
Количество Выводов 3вывод(-ов)
Максимальная Рабочая Температура 150 C
Монтаж транзистора Surface Mount
Полярность Транзистора PNP
Стиль Корпуса Транзистора TO-252(DPAK)
Частота Перехода ft 3МГц
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 700 mV
Configuration: Single
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 2500
Gain Bandwidth Product fT: 3 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Pd - Power Dissipation: 2.1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Qualification: AEC-Q101
Series: MJD32CU
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Вес, г 0.5

Техническая документация

Datasheet
pdf, 378 КБ
Datasheet
pdf, 365 КБ