CSD25310Q2T, Транзистор: P-MOSFET
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Описание
20V 20A 2.9W 23.9mΩ@5A,4.5V 1.1V@250uA P Channel WSON-6(2x2) MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 23.9mΩ@5A, 4.5V |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.1V@250uA |
| Input Capacitance (Ciss@Vds) | 655pF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.9W |
| Total Gate Charge (Qg@Vgs) | 4.7nC@4.5V |
| Type | P Channel |
| Base Product Number | CSD25310Q2 -> |
| Current - Continuous Drain (Id) @ 25В°C | 20A (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 10V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-WDFN Exposed Pad |
| Power Dissipation (Max) | 2.9W (Ta) |
| Rds On (Max) @ Id, Vgs | 23.9mOhm @ 5A, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 6-WSON (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 34 S |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | WSON-6 |
| Pd - Power Dissipation: | 2.9 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.7 nC |
| Rds On - Drain-Source Resistance: | 19.9 mOhms |
| Rise Time: | 15 ns |
| Series: | CSD25310Q2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.01 |
