CSD25484F4T, Транзистор: P-MOSFET
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Описание
20V 2.5A 500mW 94mΩ@8V,500mA 1.2V@250uA P Channel PicoStar-3 MOSFETs ROHS
Технические параметры
Continuous Drain Current (Id) | 2.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 94mΩ@8V, 500mA |
Drain Source Voltage (Vdss) | 20V |
Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
Input Capacitance (Ciss@Vds) | 230pF@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 500mW |
Total Gate Charge (Qg@Vgs) | 1.42nC@4.5V |
Type | P Channel |
Base Product Number | CSD25484 -> |
Current - Continuous Drain (Id) @ 25В°C | 2.5A (Ta) |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
ECCN | EAR99 |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 1.42nC @ 4.5V |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | 3-XFDFN |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 94mOhm @ 500mA, 8V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | FemtoFETв„ў -> |
Supplier Device Package | 3-PICOSTAR |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | -12V |
Vgs(th) (Max) @ Id | 1.2V @ 250ВµA |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 8.5 ns |
Forward Transconductance - Min: | 3.5 S |
Id - Continuous Drain Current: | 2.5 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | PICOSTAR-3 |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.09 nC |
Rds On - Drain-Source Resistance: | 825 mOhms |
Rise Time: | 5 ns |
Series: | CSD25484F4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | FemtoFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 9.5 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Вес, г | 0.01 |
Техническая документация
Datasheet CSD25484F4T
pdf, 1118 КБ