MMDT3906-7-F, Транзистор: PNP
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93 ֏
Кратность заказа 10 шт.
от 100 шт. —
58 ֏
от 300 шт. —
49 ֏
10 шт.
на сумму 930 ֏
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 400 mV |
Configuration: | Dual |
Continuous Collector Current: | -200 mA |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 250 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 200 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-363-6 |
Pd - Power Dissipation: | 200 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMDT39 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Maximum Collector Base Voltage | -40 V |
Maximum Collector Emitter Voltage | -40 V |
Maximum DC Collector Current | -200 mA |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SOT-363(SC-88) |
Pin Count | 6 |
Transistor Configuration | Isolated |
Transistor Type | PNP |
Вес, г | 0.006 |