MMDT3906-7-F, Транзистор: PNP

Фото 1/3 MMDT3906-7-F, Транзистор: PNP
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93 ֏
Кратность заказа 10 шт.
от 100 шт.58 ֏
от 300 шт.49 ֏
10 шт. на сумму 930 ֏
Номенклатурный номер: 8017550981
Бренд: DIODES INC.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 40 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 400 mV
Configuration: Dual
Continuous Collector Current: -200 mA
DC Current Gain hFE Max: 300
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 250 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-363-6
Pd - Power Dissipation: 200 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: MMDT39
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Maximum Collector Base Voltage -40 V
Maximum Collector Emitter Voltage -40 V
Maximum DC Collector Current -200 mA
Maximum Emitter Base Voltage -5 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 200 mW
Minimum DC Current Gain 100
Mounting Type Surface Mount
Number of Elements per Chip 2
Package Type SOT-363(SC-88)
Pin Count 6
Transistor Configuration Isolated
Transistor Type PNP
Вес, г 0.006

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