MMST3906-7-F, Транзистор: PNP
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см. техническую документацию
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71 ֏
Кратность заказа 20 шт.
от 200 шт. —
49 ֏
от 600 шт. —
39 ֏
от 3000 шт. —
33 ֏
20 шт.
на сумму 1 420 ֏
Описание
Transistors/Thyristors\Bipolar (BJT)
Технические параметры
| Collector Current (Ic) | 200mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@5mA, 50mA |
| DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
| Power Dissipation (Pd) | 200mW |
| Transistor Type | PNP |
| Transition Frequency (fT) | 300MHz |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -40 V |
| Collector- Emitter Voltage VCEO Max | -40 V |
| Collector-Emitter Saturation Voltage | -0.3 V |
| Configuration | Single |
| Continuous Collector Current | -0.2 A |
| DC Current Gain HFE Max | 300 |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product FT | 300 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 200 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | MMST39 |
| Subcategory | Transistors |
| Transistor Polarity | PNP |
| Maximum Collector Base Voltage | -40 V |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323(SC-70) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 1 |
